Title :
Effect of Rapid Thermal Annealing (RTA) on n-Contact of 980 nm Oxide VCSEL
Author :
Anuar, M.S.K. ; Sharizal, A.M. ; Mitani, S.M. ; Razman, Y.M. ; Mat, A.F.A. ; Choudhury, P.K.
Author_Institution :
UPM-MTDC, Serdang
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.
Keywords :
germanium; gold; laser cavity resonators; metallisation; molecular beam epitaxial growth; nickel; ohmic contacts; rapid thermal annealing; surface emitting lasers; MBE; Ni-Au-Ge-Au; RTA; electromagnetic spectrum; electron beam evaporator; molecular beam epitaxy; n-contact metallization; ohmic contacts; oxide VCSEL structures; rapid thermal annealing; wavelength 980 nm; Fabrication; Gallium arsenide; Gold; Metallization; Microelectronics; Molecular beam epitaxial growth; Nickel; Ohmic contacts; Rapid thermal annealing; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381084
