Title :
GaSb-based microcavity EP-VCSEL emitting above 2.2 μm in CW regime at RT
Author :
Ducanchez, A. ; Cerutti, L. ; Grech, P. ; Genty, F.
Author_Institution :
Univ. Montpellier II, Montpellier
Abstract :
Monolithic microcavity GaSb-based VCSELs emitting above 2.2 mum in continuous wave regime at room temperature are reported. For 60 mum diameter devices, a density threshold of 1.1 kA/cm2 was measured at 290 K.
Keywords :
III-V semiconductors; gallium compounds; integrated optics; laser beams; microcavity lasers; surface emitting lasers; GaSb; continuous wave laser; density threshold; microcavity EP-VCSEL; monolithic microcavity surface emitting laser; size 60 mum; temperature 290 K; temperature 293 K to 298 K; Gas lasers; Indium phosphide; Laser modes; Laser tuning; Microcavities; Reflectivity; Ring lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4635999
