• DocumentCode
    2991175
  • Title

    Deep-well 4.8μm -emitting quantum-cascade lasers grown by MOCVD

  • Author

    D´Souza, Meenakshi ; Shin, J.C. ; Xu, D. ; Kirch, J. ; Mawst, L.J. ; Botez, D. ; Vurgaftman, I. ; Meyer, J.R.

  • Author_Institution
    ECE Dept., Univ. of Wisconsin-Madison, Madison, WI
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    A novel design for a deep-well InP-based QC-laser structure has been realized using MOCVD growth for emission wavelengths of 4.6 mum-4.8 mum with low threshold current density (1.5 KA/cm2) at room temperature (RT) and reduced temperature sensitivity.
  • Keywords
    MOCVD; current density; quantum cascade lasers; semiconductor growth; MOCVD; current density; quantum-cascade lasers; temperature 293 K to 298 K; temperature sensitivity; wavelength 4.6 mum to 4.8 mum; Electrooptic devices; Laboratories; MOCVD; Pulse measurements; Quantum cascade lasers; Quantum well lasers; Superlattices; Temperature distribution; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636001
  • Filename
    4636001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991175