High power and low resistive GaInNAs-VCSELs with buried tunnel junctions

Author

Onishi, Yutaka ; Saga, Nobuhiro ; Koyama, Kenji ; Doi, Hideyuki ; Ishizuka, T. ; Yamada, Takashi ; Fujii, Kosuke ; Mori, Hiroki ; Hashimoto, Junichi ; Shimazu, M. ; Katsuyama, Tsukuru

Author_Institution

Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

53

Lastpage

54

Abstract

GaInNAs-VCSELs with buried tunnel junction structures are proposed and demonstrated. The maximum output powers of 4.2 mW at 25degC and 2.2 mW at 85degC are achieved with a low resistance of 65 Omega.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; semiconductor quantum wells; surface emitting lasers; GaInNAs; buried tunnel junction; low resistive VCSEL; power 2.2 mW; power 4.2 mW; quantum well; resistance; resistance 65 ohm; temperature 25 degC; temperature 85 degC; vertical-cavity surface-emitting laser; Absorption; Apertures; Distributed Bragg reflectors; Electric resistance; Laboratories; Optical losses; Oxidation; Research and development; Thermal conductivity; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636005

Filename

4636005