Title :
High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic HEMT for Ka-Band Applications
Author :
Chang, Chia-Yuan ; Chang, Edward Yi ; Lien, Yi-Chung ; Miyamoto, Yasuyuki ; Chen, Szu-Hung ; Chu, Li-Hsin
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
A 70-nm In0.52Al0.48As/In0.6Ga0.4 power MHEMT with double delta-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mni. The saturated drain-source current of the device is 890 niA/mm. A current gain cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fmax ) of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 times 40 mum device demonstrates a maximum output power of 14.5 dBm with PldB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave field effect transistors; nanotechnology; power HEMT; semiconductor doping; In0.52Al0.48As-In0.6Ga0.4As; current gain cutoff frequency; double delta-doping; frequency 200 GHz; frequency 300 GHz; frequency 32 GHz; nanometer gate length; power metamorphic HEMT fabrication; saturated drain-source current; size 70 nm; transconductance; Frequency; Gallium arsenide; HEMTs; Materials science and technology; Millimeter wave communication; PHEMTs; Resists; Substrates; Transconductance; mHEMTs;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381095
