Title :
High temperature operation of 1.26 μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate
Author :
Arai, Masakazu ; Fujisawa, Takeshi ; Kobayashi, Wataru ; Nakashima, Kiichi ; Yuda, Masahiro ; Kondo, Yasuhiro
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
We have successfully developed a 1.26 mum ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188degC) reported for a metamorphic laser.
Keywords :
III-V semiconductors; MOCVD; buffer layers; gallium arsenide; indium compounds; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; InGaAs-GaAs; high-temperature laser operation; metal-organic vapor-phase epitaxy; metamorphic buffer; ridge waveguide laser diode; semiconductor laser; temperature 188 degC; wavelength 1.26 mum; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Rough surfaces; Semiconductor lasers; Substrates; Surface roughness; Temperature distribution; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636007
