Title :
Controllable large I-L kink of tunnel injection quantum well lasers
Author :
Higa, Yasutaka ; Nakajima, Hiroshi ; Fujimoto, Kosuke ; Miyamoto, Tomoyuki
Author_Institution :
Microsyst. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
A large kink in I-L characteristics of semiconductor lasers was demonstrated by using a tunnel injection quantum well structure. The output power at the kink condition was changed from 13 mW to 1.9 mW under a small current change of 0.06Ith (30 mA) and voltage change of 0.3 V. The peak/valley (P/V) ratio of the output power was high as 6.8. The kink current and the P/V ratio were controllable by the tunneling structure with a mono-layer order thickness.
Keywords :
laser beams; quantum well lasers; tunnelling; kink condition; mono-layer order thickness; output power; semiconductor lasers; tunnel injection quantum well structure; Gallium arsenide; Laser transitions; Optical control; Power generation; Quantum well lasers; Resonance; Semiconductor lasers; Threshold current; Tunneling; Voltage;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636011
