Title :
638nm single lateral mode laser diode for Micro-Projector application
Author :
Yukawa, Makoto ; Shimada, Naoyuki ; Shibata, Kimitaka ; Ono, Ken-ichi ; Yagi, Tetsuya
Author_Institution :
High Freq.&Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami
Abstract :
The high-power operation of the lateral single mode 638 nm AlGaInP laser diode was demonstrated. The stable operation up to 220 mW at 55degC was realized. This is the highest power record among the narrow stripe 638-nm LDs. This LD is suitable for micro-projector.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; laser stability; light sources; micro-optics; optical projectors; semiconductor lasers; AlGaInP; high-power operation; microprojector application; narrow stripe LD; power 220 mW; single lateral mode laser diode; solid-state light sources; stable laser operation; temperature 55 C; wavelength 638 nm; Diode lasers; Laser beams; Light sources; Lighting; Mirrors; Optical waveguides; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636015
