Title :
Spontaneous carrier recombination lifetime in quantum well lasers with different band offset
Author :
Susaki, Wataru ; Kakuda, Shinichi ; Nishimura, Hideaki ; Tomioka, Akihiro
Author_Institution :
Osaka Electro-Commun. Univ., Neyagawa
Abstract :
Systematical study of the spontaneous carrier recombination lifetime has been performed in GaAs- and InP-based SCH quantum well lasers with different band offset. The lifetime decreases as the band offset decreases, accompanying the electron overflow.
Keywords :
III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; indium compounds; laser beams; quantum well lasers; GaAs; InP; band offset; electron overflow; quantum well lasers; separate-confinement-heterostructure-QW lasers; spontaneous carrier recombination lifetime; Charge carrier density; Charge carrier processes; Density measurement; Electrons; Gallium arsenide; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636017
