• DocumentCode
    2991452
  • Title

    Spontaneous carrier recombination lifetime in quantum well lasers with different band offset

  • Author

    Susaki, Wataru ; Kakuda, Shinichi ; Nishimura, Hideaki ; Tomioka, Akihiro

  • Author_Institution
    Osaka Electro-Commun. Univ., Neyagawa
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    Systematical study of the spontaneous carrier recombination lifetime has been performed in GaAs- and InP-based SCH quantum well lasers with different band offset. The lifetime decreases as the band offset decreases, accompanying the electron overflow.
  • Keywords
    III-V semiconductors; carrier lifetime; electron-hole recombination; gallium arsenide; indium compounds; laser beams; quantum well lasers; GaAs; InP; band offset; electron overflow; quantum well lasers; separate-confinement-heterostructure-QW lasers; spontaneous carrier recombination lifetime; Charge carrier density; Charge carrier processes; Density measurement; Electrons; Gallium arsenide; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636017
  • Filename
    4636017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991452