Title :
Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers
Author :
Sweeney, S.J. ; Hild, K. ; Marko, I.P. ; Yu, S.Q. ; Johnson, S.R. ; Zhang, Y.H.
Author_Institution :
Fac. of Eng. & Phys. Sci., Univ. of Surrey, Guildford
Abstract :
Under ambient conditions, the temperature sensitivity of 1.3 mum GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; laser beams; semiconductor lasers; surface emitting lasers; 1.3 mum surface-emitting laser; GaAsSb-GaAs; VCSEL; carrier recombination; edge-emitting laser; laser design; nonradiative current loss; temperature sensitivity; thermal characteristics; wavelength 1.3 mum; Current measurement; Gallium arsenide; Laser theory; Optical materials; Surface emitting lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636020
