Title :
Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation
Author :
Hamid, Haslinda A. ; Abdullah, Mat J. ; Aziz, Azlan A. ; Al-Hardan, N.H. ; Rosli, Siti A.
Author_Institution :
Univ. Sains Malaysia, Penang
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10-3 Omega.cm with a carrier concentration of 1.54 times 1022 cm-3.
Keywords :
II-VI semiconductors; aluminium; annealing; carrier density; electrical conductivity; electrical resistivity; nitrogen; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; DC magnetron sputtering; Si; ZnO:Al,N; annealing; carrier concentration; codoping; conduction; gas ratio; heat treatment; resistivity; resistivity 0.003412 ohmcm; silicon (111) substrates; temperature 300 degC; thin films; time 1 hr; Annealing; Conductivity; Grain size; Heat treatment; Nitrogen; Semiconductor thin films; Silicon; Sputtering; Substrates; Zinc oxide;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.381112
