Title :
Titanium doped cryogenic sapphire resonator oscillators
Author :
Kersale, Yann ; Boubekeur, N. ; Hartnett, J.G. ; Tobar, M.E. ; Bazin, N. ; Giordano, V.
Author_Institution :
Dept. LPMO, Univ. de Franche, Besancon
Abstract :
Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode operating at 34K. This resonator exhibited a frequency stability of order 2 times 10-3 for 8s < tau < 20s with the use of a Gifford-McMahon cryocooler as a cold source. This corresponds to state-of-the-art line splitting of the order of 10 -7. A second experiment with a pulse tube cryocooler shows an improvement in the short term frequency stability. The Ti4+ resonator oscillator at 13.8 GHz exhibited a frequency stability of 7 times 10-14 at tau = 16s
Keywords :
cryogenic electronics; crystal oscillators; frequency stability; microwave oscillators; sapphire; titanium; 12.7 GHz; 13.8 GHz; 34 K; Al2O3; CSRO; Gifford-McMahon cryocooler; Ti; cryogenic sapphire resonator oscillators; frequency stability; pulse tube cryocooler; Australia; Cryogenics; Frequency; Impurities; Oscillators; Paramagnetic materials; Stability; Temperature distribution; Temperature sensors; Titanium;
Conference_Titel :
Frequency Control Symposium and Exposition, 2005. Proceedings of the 2005 IEEE International
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-9053-9
DOI :
10.1109/FREQ.2005.1573960