DocumentCode :
2991776
Title :
Studies on Failure Mechanism of Al Fluoride Oxide-AlxOyFz on Microchip Al Bondpads
Author :
Younan, Hua ; Siping, Zhao ; Ramesh, Rao ; Kun, Li
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
fYear :
2006
fDate :
Oct. 29 2006-Dec. 1 2006
Firstpage :
528
Lastpage :
532
Abstract :
Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and 3 form Al-F complex compound, such as [AlF6]3-. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide- AlxOyFz.
Keywords :
aluminium; failure analysis; surface contamination; wafer bonding; AlOF; bonding process; chemical reaction; failure mechanism; microchip bondpads; non-stick on pad problem; surface contamination; Chemical compounds; Chemical products; Contamination; Fabrication; Failure analysis; Inspection; Scanning electron microscopy; Spectroscopy; Surface morphology; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
Type :
conf
DOI :
10.1109/SMELEC.2006.380686
Filename :
4266669
Link To Document :
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