DocumentCode
2991811
Title
Studies on A Sample Preparation Method for HR-SEM and Application in Failure Analysis of Trench TEOS Gauging Measurement in Wafer Fabrication
Author
Siping, Zhao ; Younan, Hua ; Zhiqiang, Mo ; Ying, Cho Jie
Author_Institution
Chartered Semicond. Mfg Ltd, Singapore
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Firstpage
533
Lastpage
536
Abstract
To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.
Keywords
failure analysis; integrated circuit measurement; integrated circuit testing; surface treatment; chemical staining; failure analysis; trench TEOS gauging measurement; wafer fabrication; Chemical industry; Chemical technology; Chromium; Coatings; Etching; Fabrication; Failure analysis; Passivation; Performance evaluation; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.380687
Filename
4266670
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