• DocumentCode
    2991811
  • Title

    Studies on A Sample Preparation Method for HR-SEM and Application in Failure Analysis of Trench TEOS Gauging Measurement in Wafer Fabrication

  • Author

    Siping, Zhao ; Younan, Hua ; Zhiqiang, Mo ; Ying, Cho Jie

  • Author_Institution
    Chartered Semicond. Mfg Ltd, Singapore
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    533
  • Lastpage
    536
  • Abstract
    To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.
  • Keywords
    failure analysis; integrated circuit measurement; integrated circuit testing; surface treatment; chemical staining; failure analysis; trench TEOS gauging measurement; wafer fabrication; Chemical industry; Chemical technology; Chromium; Coatings; Etching; Fabrication; Failure analysis; Passivation; Performance evaluation; Protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380687
  • Filename
    4266670