DocumentCode
2991855
Title
Highly stacked quantum dot laser fabricated using a strain compensation technique
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Tsuchiya, Masahiro
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Koganei
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
115
Lastpage
116
Abstract
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.58 mum above the threshold current of 162 mA in pulsed mode.
Keywords
III-V semiconductors; indium compounds; laser beams; laser modes; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; InAs quantum dots; current 162 mA; laser diode fabrication; laser emission; stacked quantum dot laser; strain compensation technique; threshold current; wavelength 1.58 mum; Capacitive sensors; Electrodes; Indium phosphide; Laser modes; Lattices; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636036
Filename
4636036
Link To Document