Title :
Analysis of InAs/InP quantum dash lasers
Author :
Heck, Susannah ; Osborne, Simon ; Healy, Sorcha ; Reilly, Eoin P O ; Lelarge, Francois ; Poingt, Francis ; Accard, Alain ; Pommereau, Frederic ; Gougezigou, Odile Le
Author_Institution :
Tyndall Nat. Inst., Lee Maltings
Abstract :
Calculations show electrons are not confined in the dashes in 1.5 mum InAs/InGaAsP/InP quantum dash in a well structures. Calculations and photoabsorption measurements show strongly polarised recombination. The threshold current remains dominated by Auger recombination.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; localised states; photoexcitation; quantum dot lasers; Auger recombination; InAs-InGaAsP-InP; nonconfined electron states; photoabsorption measurements; polarised recombination; quantum dash lasers analysis; threshold current; Absorption; Capacitive sensors; Indium phosphide; Laser theory; Optical polarization; Quantum dot lasers; Quantum dots; Quantum well lasers; Radiative recombination; Spontaneous emission;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636040
