DocumentCode :
2991972
Title :
Increased Capacitance Density with Metal-Insulator-Metal - Metal Finger Capacitor (MIM-MFC)
Author :
Subramaniam, Kalavathi ; Kordesch, Albert Victor ; Esa, Mazlina
Author_Institution :
Univ. of Technol., Skudai
fYear :
2006
fDate :
Oct. 29 2006-Dec. 1 2006
Firstpage :
567
Lastpage :
571
Abstract :
Capacitors are indispensable in mixed signal and RF applications. In mixed signal applications, capacitors and inductors often take up a very large space on the chip as compared to the digital portion of the circuit. In this paper we propose a new configuration of metal-insulator-metal - metal finger capacitor (MIM-MFC) to increase capacitance density. This capacitor is designed to be area effective, thus it is an attractive choice for mixed signal and RF applications. The capacitors were fabricated using Silterra Malaysia´s 180 nm RF CMOS process technology. This paper also provides low frequency characterization measurement data for MIM-MFC. Analysis is made as compared to pure MIM and pure MFC that were fabricated on identical process and measured on the same wafer.
Keywords :
CMOS integrated circuits; MIM devices; capacitors; frequency measurement; integrated circuit measurement; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; MIM-MFC; RF CMOS process technology; RF applications; Silterra Malaysia; capacitance density; low frequency characterization; metal-insulator-metal-metal finger capacitor; mixed signal applications; size 180 nm; CMOS process; Capacitance; Circuits; Fingers; Inductors; MIM capacitors; Metal-insulator structures; RF signals; Radio frequency; Signal design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
Type :
conf
DOI :
10.1109/SMELEC.2006.380695
Filename :
4266678
Link To Document :
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