Considerations on the C-V Characteristics of Pentacene Metal-Insulator-Semiconductor Capacitors

Author

Jung, Keum-Dong ; Kim, Byung-ju ; Kim, Byeong-Ju ; Lee, Cheon An ; Park, Dong-Wook ; Park, Byung-Gook ; Shin, Hyungcheol ; Lee, John Duk

Author_Institution

Seoul Nat. Univ., Seoul

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

572

Lastpage

575

Abstract

C-V characteristics of pentacene MIS capacitors are obtained with various measurement conditions. High measuring frequency can decrease the measured capacitance due to the slow response of holes. When thick semiconductor is used, accurate C-V characteristics can not be obtained due to the resistance of bulk semiconductor. Bias stress makes positive or negative flat band voltage shift, also complicate accurate C-V measurement. Therefore, to obtain reliable C- V characteristics of organic MIS capacitors, these properties should be considered.

Keywords

MIS capacitors; capacitance measurement; characteristics measurement; organic semiconductors; semiconductor device measurement; C-V characteristics; bias stress; bulk semiconductor; capacitance measurement; organic MIS capacitors; pentacene metal-insulator-semiconductor capacitors; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Electrical resistance measurement; Frequency measurement; Insulation; Metal-insulator structures; Organic semiconductors; Pentacene; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.380696

Filename

4266679