Title :
253 mW/μm maximum power density from 9xx nm epitaxial laser structures with d/Γ greater than 1 μm
Author :
Petrescu-Prahova, I.B. ; Modak, P. ; Goutain, E. ; Bambrick, D. ; Silan, D. ; Riordan, J. ; Moritz, T. ; Marsh, J.H.
Author_Institution :
Intense-HPD, North Brunswick, NJ
Abstract :
This study has presented the results for scaling the maximum power for two series of 940-962 nm diode lasers by scaling the d/Gamma ratio simultaneously with the device length. Experimental validation of this approach is also presented. A record maximum power of 25.3 W from a 100 mum aperture broad stripe laser operating at 940 nm and record power density of 253 mW/mum are obtained for a cavity length of 5 mm and a d/Gamma ratio of 1.17 mum.
Keywords :
laser cavity resonators; semiconductor lasers; broad stripe laser; d/Gamma ratio; diode lasers; epitaxial laser structures; maximum power density; maximum power scaling; power 25.3 W; size 100 mum; size 5 mm; wavelength 940 nm to 962 nm; Apertures; Brightness; Charge carrier processes; Current density; Diode lasers; Doping; Fiber lasers; Indium gallium arsenide; Power lasers; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636046
