Title :
Advances in processing techniques for silicon micromechanical devices with smooth surfaces
Author :
Guckel, H. ; Sniegowski, J.J. ; Christenson, T.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The use of fine-grained polysilicon in the development of micromechanical devices (e.g. bearings, with smooth surfaces) is discussed. Fine-grained polysilicon can be produced with surface roughness near 8 Å r.m.s. (root mean square). The ability to anneal films of this type into tension eliminates size restrictions which are caused by compressive buckling. The use of these films in micromechanical devices has been restricted because hydrogen-fluoride-etched structures are covered by an etch residue which leads to contact welding. Contact between opposing surfaces is induced mainly by surface tension effects. This problem can be avoided by removing the deflection mechanism. Thus, freezing of a water-methanol rinse after sacrificial etching all but eliminates surface tension. Removal of the ice mixture via sublimation at 0.15 mbar occurs readily. Free-standing structures with smooth surfaces and small gaps are then passivated by silicon nitride deposition or other techniques
Keywords :
elemental semiconductors; semiconductor technology; silicon; 0.15 mbar; HF etching; Si3N4-Si passivation; bearings; contact welding; etch residue; film annealing; fine-grained; free-standing structures; freezing; ice mixture; micromechanical devices; passivation; polycrystalline Si; processing techniques; sacrificial etching; size restriction elimination; smooth surfaces; sublimation; surface roughness; surface tension elimination; tension; water-methanol rinse; Annealing; Etching; Ice; Micromechanical devices; Root mean square; Rough surfaces; Silicon; Surface roughness; Surface tension; Welding;
Conference_Titel :
Micro Electro Mechanical Systems, 1989, Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Salt Lake City, UT
DOI :
10.1109/MEMSYS.1989.77964