Title :
Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis
Author :
Lee, Sharon ; Younan, Hua ; Siping, Zhao ; Zhiqiang, Mo
Author_Institution :
Chartered Semicond. Mfg Ltd, Singapore
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5 kV, 10 kV, 15 kV, 20 kV, 25 kV and 30 kV for the various possible elements/materials in wafer fabrication.
Keywords :
Monte Carlo methods; X-ray chemical analysis; failure analysis; wafer bonding; Monte Carlo electron flight simulation method; electron beam acceleration voltage; electron penetration depth; energy-dispersive X-ray microanalysis; failure analysis; voltage 10 kV; voltage 15 kV; voltage 20 kV; voltage 25 kV; voltage 30 kV; voltage 5 kV; wafer fabrication; Acceleration; Aerospace materials; Electron beams; Fabrication; Failure analysis; Monte Carlo methods; Particle beams; Tin; Transistors; Voltage;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380704
