Studies on Electron Penetration Versus Beam Acceleration Voltage in Energy-Dispersive X-Ray Microanalysis

Author

Lee, Sharon ; Younan, Hua ; Siping, Zhao ; Zhiqiang, Mo

Author_Institution

Chartered Semicond. Mfg Ltd, Singapore

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

610

Lastpage

613

Abstract

Energy-dispersive X-ray microanalysis technique has been commonly used in failure analysis. It is vital for an analyst to understand the electron penetration depth in a certain material so as to be able to select an appropriate accelerating beam voltage. In this paper, we will use the Monte Carlo electron flight simulation method to obtain the electron penetration data at the different beam acceleration voltages of 5 kV, 10 kV, 15 kV, 20 kV, 25 kV and 30 kV for the various possible elements/materials in wafer fabrication.

Keywords

Monte Carlo methods; X-ray chemical analysis; failure analysis; wafer bonding; Monte Carlo electron flight simulation method; electron beam acceleration voltage; electron penetration depth; energy-dispersive X-ray microanalysis; failure analysis; voltage 10 kV; voltage 15 kV; voltage 20 kV; voltage 25 kV; voltage 30 kV; voltage 5 kV; wafer fabrication; Acceleration; Aerospace materials; Electron beams; Fabrication; Failure analysis; Monte Carlo methods; Particle beams; Tin; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.380704

Filename

4266687