DocumentCode
2992246
Title
Plane-view Transmission Electron Microscopy for Advanced Integrated Circuit
Author
Liu, Pan ; Li, K. ; Eddie, E.R. ; Zhao, Siping
Author_Institution
Chartered Semicond. Manuf. Ltd., Singapore
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Firstpage
630
Lastpage
633
Abstract
In this paper, the authors try to introduce three techniques for plane-view TEM sample preparation. First, traditional plane-view TEM sample preparation will be introduced. The second technique is FIB- based lift-out method, which places the sample on the carbon film. This technique is used to cut isolated defects, such as SRAM single bit failure, but this technique introduces artifacts from FIB ion damage and carbon film. The last technique is a combination of tripod polishing, FIB milling and ion milling. Specific cases will be given to illustrate the application of these techniques.
Keywords
integrated circuits; polishing; transmission electron microscopy; FIB milling; SRAM single bit failure; advanced integrated circuit; ion milling; plane-view transmission electron microscopy; tripod polishing; Amorphous materials; Circuits; Condition monitoring; Dielectric substrates; Erbium; Milling; Process control; Random access memory; Transmission electron microscopy; Wood industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.380709
Filename
4266692
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