Title :
Two lumped-charge based power MOSFET models
Author :
Subramanian, Yeshwant ; Lauritzen, P.O. ; Green, K.R.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
This paper presents models for two DMOS devices, the low-voltage lateral diffused MOSFET for IC applications (LDMOS) and the discrete vertical diffused power MOSFET (VDMOS), both developed using the lumped-charge methodology. The LDMOS model gives better performance than the BSIM3 which is the industry-standard model for the lateral diffused MOSFET. The VDMOS model is an improved version of the Budihardjo-Lauritzen model
Keywords :
power MOSFET; semiconductor device models; DMOS devices; IC applications; LDMOS; VDMOS; discrete vertical diffused power MOSFET; improved Budihardjo-Lauritzen model; low-voltage lateral diffused MOSFET; lumped-charge based power MOSFET models; Application specific integrated circuits; Equations; Integrated circuit modeling; MOSFET circuits; Power MOSFET; Power system modeling; Semiconductor device modeling; Semiconductor devices; USA Councils; Voltage;
Conference_Titel :
Computers in Power Electronics, 1998. 6th Workshop on
Conference_Location :
Cernobbio
Print_ISBN :
0-7803-4856-7
DOI :
10.1109/CIPE.1998.779651
