Title :
Analysis of the IGBT under QR-ZCS operation using a special test circuit
Author :
Orozco, J. ; Nájera, P. ; Sánchez, A.C. ; Aran, J.
Author_Institution :
Nat. Center for Res. & Technol. Dev., CENIDET, Cuernavaca, Mexico
Abstract :
This work presents the behavior analysis of the IGBT under zero current switching (ZCS) conditions and the design considerations of a special test circuit used to study power semiconductors. The conditions of the operation mode selected, single-shot, allows limits of the power source consumption, which allows different tests to be carried out in extreme operating conditions. The advantages of the special test circuit allow study under different operating conditions such as: frequency increments and quantity of stored charge as a function of the OFF time
Keywords :
insulated gate bipolar transistors; semiconductor device testing; IGBT analysis; PC based test system; QR-ZCS operation; design considerations; extreme operating conditions; frequency increments; operation mode; power semiconductors; power source consumption; quasi-resonant zero current switching operation; special test circuit; stored charge quantity; Circuit testing; Insulated gate bipolar transistors; Performance analysis; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Semiconductor device testing; Switching circuits; System testing; Zero current switching;
Conference_Titel :
Computers in Power Electronics, 1998. 6th Workshop on
Conference_Location :
Cernobbio
Print_ISBN :
0-7803-4856-7
DOI :
10.1109/CIPE.1998.779654
