Analysis of the IGBT under QR-ZCS operation using a special test circuit

Author

Orozco, J. ; Nájera, P. ; Sánchez, A.C. ; Aran, J.

Author_Institution

Nat. Center for Res. & Technol. Dev., CENIDET, Cuernavaca, Mexico

fYear

1998

fDate

1998

Firstpage

23

Lastpage

26

Abstract

This work presents the behavior analysis of the IGBT under zero current switching (ZCS) conditions and the design considerations of a special test circuit used to study power semiconductors. The conditions of the operation mode selected, single-shot, allows limits of the power source consumption, which allows different tests to be carried out in extreme operating conditions. The advantages of the special test circuit allow study under different operating conditions such as: frequency increments and quantity of stored charge as a function of the OFF time

Keywords

insulated gate bipolar transistors; semiconductor device testing; IGBT analysis; PC based test system; QR-ZCS operation; design considerations; extreme operating conditions; frequency increments; operation mode; power semiconductors; power source consumption; quasi-resonant zero current switching operation; special test circuit; stored charge quantity; Circuit testing; Insulated gate bipolar transistors; Performance analysis; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Semiconductor device testing; Switching circuits; System testing; Zero current switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers in Power Electronics, 1998. 6th Workshop on

Conference_Location

Cernobbio

ISSN

1093-5142

Print_ISBN

0-7803-4856-7

Type

conf

DOI

10.1109/CIPE.1998.779654

Filename

779654