DocumentCode :
2992353
Title :
Kerr nonlinearity in silicon beyond 2.35μm
Author :
Zlatanovic, S. ; Gholami, F. ; Simic, A. ; Liu, L. ; Alic, N. ; Nezhad, M. ; Fainman, Y. ; Radic, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
fYear :
2011
fDate :
18-20 July 2011
Firstpage :
59
Lastpage :
60
Abstract :
We present measurements of χ(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10-18 m2/W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.
Keywords :
elemental semiconductors; nonlinear optics; optical Kerr effect; silicon; Kerr coefficients; Kerr nonlinearity; Si; nonlinear processes; wavelength 2.35 mum to 2.75 mum; Absorption; Apertures; Laser beams; Measurement by laser beam; Optical filters; Silicon; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2011 IEEE
Conference_Location :
Montreal, QC
ISSN :
Pending
Print_ISBN :
978-1-4244-5730-4
Type :
conf
DOI :
10.1109/PHOSST.2011.6000043
Filename :
6000043
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2992353
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