Title :
Power MOSFET macromodel accounting for temperature dependence: parameter extraction and simulation
Author :
Leonardi, C. ; Frisina, F. ; Letor, R. ; Raciti, A.
Author_Institution :
STMicroelectron., Catania, Italy
Abstract :
A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. A new computer aided design package that helps the designer in the parameter extraction procedure is discussed in detail. The model accuracy has been tested by comparison of the simulated waveforms with the experimental traces relative to actual devices
Keywords :
SPICE; electronic design automation; power MOSFET; semiconductor device models; computer aided design package; parameter extraction; parameter extraction procedure; power MOSFET macromodel; simulated waveforms; simulation; temperature dependence; Circuit simulation; Circuit testing; Computational modeling; MOSFET circuits; Parameter extraction; Parasitic capacitance; Power MOSFET; Power system modeling; Temperature dependence; Threshold voltage;
Conference_Titel :
Computers in Power Electronics, 1998. 6th Workshop on
Conference_Location :
Cernobbio
Print_ISBN :
0-7803-4856-7
DOI :
10.1109/CIPE.1998.779656
