Title :
Uncooled SiC MWIR detector based on optical signal
Author :
Lim, Geunsik ; Manzur, Tariq ; Kar, Aravinda
Author_Institution :
Dept. of Mech., Mater. & Aerosp. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Crystalline SiC has been doped with a p-type dopant using a laser doping technique to create an intermediate energy level within the bandgap of SiC. The energy gap between this acceptor level and the valence band of SiC is designed to match the midwave infrared (MWIR) wavelength (3-5 μm) of the photons that need to be detected. Although this study presents results pertaining to MWIR detection, the approach to creating intermediate energy levels can be utilized to fabricate crystalline semiconductor-based broadband detectors and emitters in the MWIR range.
Keywords :
energy gap; impurity states; infrared detectors; semiconductor doping; silicon compounds; valence bands; wide band gap semiconductors; SiC; acceptor level; bandgap; broadband detectors; broadband emitters; crystalline SiC; crystalline semiconductor; intermediate energy level; laser doping; optical signal; p-type dopant; uncooled SiC MWIR detector; valence band; wavelength 3 mum to 5 mum; Detectors; Energy states; Optical detectors; Optical device fabrication; Optical reflection; Optical variables control; Silicon carbide;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2011 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-5730-4
DOI :
10.1109/PHOSST.2011.6000048
