Title :
High power tunable yellow laser using InGaAs/GaAs vertical external-cavity surface-emitting lasers
Author :
Fallahi, Mahmoud ; Hessenius, Chris ; Fan, Li ; Hader, Jorg ; Li, Hongbo ; Moloney, Jerome V. ; Stolz, Wolfgang ; Koch, Stephan W.
Author_Institution :
Coll. of Opt. Sci., Arizona Univ., Tucson, AZ
Abstract :
In this work, a highly strained InGaAs/GaAs VECSEL which can cover a longer wavelength range of 1150 nm to 1190 nm is developed. This laser has a robust multi-Watt power performance. Using intracavity frequency doubling, high-power coherent light is demonstrated in a wide yellow-orange band (575~595 nm).
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser tuning; optical harmonic generation; quantum well lasers; surface emitting lasers; InGaAs-GaAs; high power tunable yellow laser; highly strained VECSEL; intracavity frequency doubling; vertical external cavity surface emitting laser; wavelength 1150 nm to 1190 nm; Gallium arsenide; Indium gallium arsenide; Laser tuning; Mirrors; Optical harmonic generation; Optical pumping; Power lasers; Surface emitting lasers; Tunable circuits and devices; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636063
