Title :
Analysis of Airborne Boron and Phosphorus Contaminations on Wafer Surface by TOF-SIMS
Author :
Zhiqiang, Mo ; Dong, Gui ; Younan, Hua ; Siping, Zhao ; Zhenxiang, Xing
Author_Institution :
Chartered Semicond. Mfg Ltd., Singapore
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Airborne boron and phosphorus contaminations on wafer surface has been analysed by TOF-SIMS. A known boron and phosphorus concentration BPSG sample was used as reference for the calibration of the TOF-SIMS. The detection limit reaches 1E8 at/cm2 for boron and 1E10 at/cm2 for phosphorus. This method is easy to applied and no sample preparation required. So TOF- SIMS is a very good monitoring technique for airborne boron and phosphorus on wafer surface.
Keywords :
mass spectroscopic chemical analysis; surface contamination; time of flight mass spectrometers; B; P; airborne boron contamination; airborne phosphorus contamination; time-of-flight secondary ion mass spectrometry; wafer surface; Boron; Calibration; Mass spectroscopy; Measurement techniques; Microelectronics; Monitoring; Silicon; Sputtering; Surface contamination; Wood industry;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380720
