• DocumentCode
    2992488
  • Title

    Analysis of Airborne Boron and Phosphorus Contaminations on Wafer Surface by TOF-SIMS

  • Author

    Zhiqiang, Mo ; Dong, Gui ; Younan, Hua ; Siping, Zhao ; Zhenxiang, Xing

  • Author_Institution
    Chartered Semicond. Mfg Ltd., Singapore
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    677
  • Lastpage
    679
  • Abstract
    Airborne boron and phosphorus contaminations on wafer surface has been analysed by TOF-SIMS. A known boron and phosphorus concentration BPSG sample was used as reference for the calibration of the TOF-SIMS. The detection limit reaches 1E8 at/cm2 for boron and 1E10 at/cm2 for phosphorus. This method is easy to applied and no sample preparation required. So TOF- SIMS is a very good monitoring technique for airborne boron and phosphorus on wafer surface.
  • Keywords
    mass spectroscopic chemical analysis; surface contamination; time of flight mass spectrometers; B; P; airborne boron contamination; airborne phosphorus contamination; time-of-flight secondary ion mass spectrometry; wafer surface; Boron; Calibration; Mass spectroscopy; Measurement techniques; Microelectronics; Monitoring; Silicon; Sputtering; Surface contamination; Wood industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380720
  • Filename
    4266703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2992488