DocumentCode
2992532
Title
ITO-Free Polymer Solar Cells with Ag/WO3 Semi-Transparent Electrodes
Author
Yu, Wenjuan ; Meng, Fanxu ; Wang, Yu ; Xu, Peng ; Shen, Liang
Author_Institution
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
3
Abstract
We report on the fabrication of the ITO-free polymer solar cells with the structure of silver (Ag)/ tungsten trioxide (WO3)/regioregular poly-(3-hexylthiophene) (RR-P3HT): [6,6]-phenyl C60 butyric acid methyl ester (PCBM)/ lithium fluoride (LiF)/ aluminum (Al). The Ag/WO3, which is processed from vacuum deposition method, is used as the anode to instead of the traditional high cost indium tin oxide (ITO) electrodes. The high conductivity metal Ag is used as the anode. Semiconductor materials WO3, whose valence band of -4.8eV is corresponding to the highest occupied molecular orbital (HOMO) of -5.2eV of P3HT, is used as the hole transport layer (HTL). We have investigated the photocurrent density-voltage (J-V), incident photon-to-electron conversion efficiency (IPCE), and UV-visible spectrum of this device. Therefore we have demonstrated that the ITO-free semi-transparent polymer solar cells can be achieved.
Keywords
electrical conductivity; electrodes; lithium compounds; organic semiconductors; photoconductivity; silver; solar cells; tungsten compounds; ultraviolet spectra; vacuum deposition; valence bands; visible spectra; Ag-LiF-Al-WO3; HOMO; ITO-free polymer solar cells; UV-visible spectrum; [6,6]-phenyl C60 butyric acid methyl ester; high conductivity metal; high cost indium tin oxide electrodes; highest occupied molecular orbital; hole transport layer; photocurrent density-voltage; photon-to-electron conversion efficiency; regioregular poly-(3-hexylthiophene); semiconductor materials; semitransparent electrodes; vacuum deposition method; valence band; Absorption; Anodes; Indium tin oxide; Photonics; Photovoltaic cells; Polymers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6270439
Filename
6270439
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