Proposal of BeZnSeTe/MgZnCdSe II–VI compound semiconductors on InP substrates for green laser diodes

In this study, we have investigated the possibility of MgZnCdSe, BeZnTe, and BeZnSeTe II-VI materials for green LDs and LEDs. At first, we fabricated light emitting devices using these materials on InP substrates by MBE. The device was composed of a 10 nm-thick BeZnSeTe QW active layer sandwiched by MgSe/BeZnSeTe superlattice (SL) barrier layers, Cl-doped MgSe/ZnCdSe SL n-cladding, and N-doped MgSe/BeZnTe SL p-cladding layers. Pure green emissions around 537 nm were obtained by current injections. Aging tests of the devices under DC bias conditions at room temperature showed a long lifetime (more than 4800 h) operation without any rapid or catastrophic degradation. This is a great advancement in the device lifetime compared with precedent blue-green II-VI devices, in which the lifetimes were less than several hundred hours. This shows high reliability of the BeZnSeTe devices.