DocumentCode
2992656
Title
High-efficiency GaN-based laser diodes for solid-state lighting
Author
Saito, Sakuyoshi ; Hattori, Y. ; Sugai, M. ; Harada, Y. ; Jongil, H. ; Nunoue, S.
Author_Institution
Corp. R&D Center, Toshiba Corp., Kawasaki
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
185
Lastpage
186
Abstract
GaN-based laser diodes (LDs) with a slope efficiency of 2.6 W/A are presented. The white light source was fabricated by using 405 nm LDs and phosphors. The luminous flux was estimated to be 200 lm.
Keywords
III-V semiconductors; gallium compounds; laser beams; light sources; optical fabrication; phosphors; semiconductor lasers; wide band gap semiconductors; GaN; laser diodes; luminous flux; phosphors; slope efficiency; solid-state lighting; wavelength 405 nm; white light source fabrication; Current density; Diode lasers; Lasers and Electro-Optics Society; Light sources; Optical films; Phosphors; Power lasers; Pulse measurements; Semiconductor films; Solid state lighting;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636071
Filename
4636071
Link To Document