• DocumentCode
    2993065
  • Title

    Low Noise AllnAs Planar Junction Avalanche Photodiode for 10 Gb/s Applications

  • Author

    Rouvie, A. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Pommereau, F. ; Achouche, M.

  • Author_Institution
    Alcatel Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France anne.rouvie@3-5lab.fr
  • fYear
    2006
  • fDate
    24-28 Sept. 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a back-illuminated planar AllnAs APD. We obtain a low excess noise factor of 4 at M=10 measured with an accurate noise characterization method and a high bandwidth over 10 GHz (M=1.5 to 7).
  • Keywords
    Absorption; Assembly; Avalanche photodiodes; Bandwidth; Dark current; Indium phosphide; Lighting; Noise measurement; Optical materials; Optical noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications, 2006. ECOC 2006. European Conference on
  • Conference_Location
    Cannes, France
  • Print_ISBN
    978-2-912328-39-7
  • Electronic_ISBN
    978-2-912328-39-7
  • Type

    conf

  • DOI
    10.1109/ECOC.2006.4801244
  • Filename
    4801244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2993065