• DocumentCode
    29932
  • Title

    Prolog to "Rugged Electrical Power Switching in Semiconductors: A Systems Approach"

  • Author

    Esch, Jim

  • Volume
    102
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    32
  • Lastpage
    34
  • Abstract
    Despite the fact that wide bandgap (WBG) semiconductor materials - in particular, silicon carbide (SiC) and gallium nitride (GaN)-have superior electrical and thermal characteristics when compared to silicon, making them promising candidates for use in compact high-power converters, the commercialization of SiC and GaN has been quite slow in arriving.
  • Keywords
    gallium compounds; silicon compounds; switching convertors; wide band gap semiconductors; GaN; SiC; WBG semiconductor materials; electrical characteristics; gallium nitride; high-power converters; rugged electrical power switching; silicon carbide; system approach; thermal characteristics; wide bandgap semiconductor materials; Electronic circuits; Power electronics; Power system reliability; Power transmission; Semiconductor manufacturing; Special issues and sections; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2013.2291299
  • Filename
    6685913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=29932