DocumentCode :
29932
Title :
Prolog to "Rugged Electrical Power Switching in Semiconductors: A Systems Approach"
Author :
Esch, Jim
Volume :
102
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
32
Lastpage :
34
Abstract :
Despite the fact that wide bandgap (WBG) semiconductor materials - in particular, silicon carbide (SiC) and gallium nitride (GaN)-have superior electrical and thermal characteristics when compared to silicon, making them promising candidates for use in compact high-power converters, the commercialization of SiC and GaN has been quite slow in arriving.
Keywords :
gallium compounds; silicon compounds; switching convertors; wide band gap semiconductors; GaN; SiC; WBG semiconductor materials; electrical characteristics; gallium nitride; high-power converters; rugged electrical power switching; silicon carbide; system approach; thermal characteristics; wide bandgap semiconductor materials; Electronic circuits; Power electronics; Power system reliability; Power transmission; Semiconductor manufacturing; Special issues and sections; Switching circuits;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/JPROC.2013.2291299
Filename :
6685913
Link To Document :
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