Title : 
Investigation of Single-Transistor Active Pixel Image Sensor Compatible with Dual-Poly-Gate Technology
         
        
            Author : 
Liu, Xin-Yan ; Lin, Xi ; Cao, Cheng-Wei ; Sun, Qing-Qing ; Lin, Paul-Chang ; Bian, Yi-Jun ; Xing, Cheng ; Wang, Peng-Fei ; Zhang, David Wei
         
        
            Author_Institution : 
Dept. of Microelectron., Fudan Univ., Shanghai, China
         
        
        
        
        
        
            Abstract : 
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
         
        
            Keywords : 
EPROM; image sensors; integrated optoelectronics; nondestructive readout; optical fabrication; EEPROM fabrication process; dual-poly-gate technology; integration compatibility; light sensing performance; nondestructive reading; operation mechanism; single-transistor active pixel image sensor; Arrays; EPROM; Image sensors; Junctions; Logic gates; Nonvolatile memory; Transistors;
         
        
        
        
            Conference_Titel : 
Photonics and Optoelectronics (SOPO), 2012 Symposium on
         
        
            Conference_Location : 
Shanghai
         
        
        
            Print_ISBN : 
978-1-4577-0909-8
         
        
        
            DOI : 
10.1109/SOPO.2012.6270474