DocumentCode
2993319
Title
Investigation of Single-Transistor Active Pixel Image Sensor Compatible with Dual-Poly-Gate Technology
Author
Liu, Xin-Yan ; Lin, Xi ; Cao, Cheng-Wei ; Sun, Qing-Qing ; Lin, Paul-Chang ; Bian, Yi-Jun ; Xing, Cheng ; Wang, Peng-Fei ; Zhang, David Wei
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
4
Abstract
A single-transistor active pixel image sensor compatible with dual-poly-gate technology is investigated in this paper. The integration compatibility is studied by integrating this device using EEPROM fabrication processes. The operation mechanism, light sensing performance, and non-destructive reading of this image sensor will be discussed.
Keywords
EPROM; image sensors; integrated optoelectronics; nondestructive readout; optical fabrication; EEPROM fabrication process; dual-poly-gate technology; integration compatibility; light sensing performance; nondestructive reading; operation mechanism; single-transistor active pixel image sensor; Arrays; EPROM; Image sensors; Junctions; Logic gates; Nonvolatile memory; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6270474
Filename
6270474
Link To Document