Auger PID Characterization of Threshold Voltage Shift and Application in Bond pad Monitoring of Wafer Fabrication

This paper presents the effects of Auger electron spectroscopy on semiconductor device´s threshold voltage performance. Bond pads connected to gate of transistors were exposed to different beam energy of 0, 3, 5, 10, 15 and 20 keV for an average of 2.5 minutes. Vt measurements were collected once at pre-exposure and thrice at post-exposure. The evaluation results show that the transistor Vt was impacted and shifted after exposure to electron beam at varying energy levels (3, 5,10, 15 and 20 keV) during AES analysis.