Title :
The Growth of III-V Nitrides Heterostucture on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy
Author :
Yam, F.K. ; Hassan, Z. ; Chuah, L.S. ; Zainal, N. ; Chin, C.W. ; Thahab, S.M. ; Hussein, M.
Author_Institution :
Univ. Sains Malaysia, Penang
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow InGaN/GaN/AIN on Si (111) substrate. The film is then characterized by high-resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). The studies show that the structural quality of the film is comparative to the values reported in the literature. PL measurement exhibits a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good optical quality of the film.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma deposition; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; silicon; wide band gap semiconductors; HR-XRD; III-V nitrides heterostucture; InGaN-GaN-AlN-Si; Si; band edge emission; high-resolution X-ray diffraction; photoluminescence; plasma-assisted molecular beam epitaxy; structural quality; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Optical diffraction; Optical films; Photoluminescence; Plasma measurements; Plasma x-ray sources; Substrates; X-ray diffraction;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380775
