Title :
InAlGaP vertical cavity surface emitting lasers (VCSELs): processing and performance
Author :
Crawford, M. Hagerott ; Choquette, K.D. ; Hick, R.J. ; Geib, K.M.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The performance of AlGaInP based visible VCSELs has been advanced with the application of new heterostructure designs and the technique of selective oxidation. Improved performance at elevated temperatures as well as high wallplug efficiency, low threshold devices have been demonstrated for devices operating in the 670-680 nm region. Challenges still remain in demonstrating high performance devices with emission wavelengths shorter than 650 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; ion implantation; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 25 to 85 C; 670 to 680 nm; AlGaInP; AlGaInP based visible VCSELs; CW lasing; compressively strained quantum wells; elevated temperature performance; heterostructure designs; high wallplug efficiency low threshold devices; ion implantation; performance; processing; selective oxidation; temperature dependent L-I-V data; vertical cavity surface emitting lasers; Apertures; Distributed Bragg reflectors; Fiber lasers; Ion implantation; Optical design; Oxidation; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600021
