Low threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy

Author

Savolainen, Pekka ; Toivonen, Mika ; Jalonen, Marko ; Pessa, Markus

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1997

fDate

11-15 May 1997

Firstpage

44

Lastpage

46

Abstract

We report on 808 nm wavelength lasers grown by solid source molecular beam epitaxy. These tensile strained GaInP-GaInAsP single quantum well lasers exhibited a low threshold current density of 230 A/cm² with a cavity length of 2 mm. A 1 mm long device launched 2 W CW output power with a wallplug efficiency of nearly 50%. The measured lasing characteristics compare favorably to those of 808 nm lasers grown by other growth techniques

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1 mm; 2 W; 2 mm; 50 percent; 808 nm; CW output power; GaInP-GaInAsP; SCH-QW lasers; cavity length; lasing characteristics; solid source molecular beam epitaxy; tensile strained GaInP-GaInAsP single quantum well lasers; threshold current density; wallplug efficiency; Aluminum; Diode lasers; Laser theory; Molecular beam epitaxial growth; Pump lasers; Quantum well lasers; Solid lasers; Surface emitting lasers; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600024

Filename

600024