Title :
Low threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy
Author :
Savolainen, Pekka ; Toivonen, Mika ; Jalonen, Marko ; Pessa, Markus
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
We report on 808 nm wavelength lasers grown by solid source molecular beam epitaxy. These tensile strained GaInP-GaInAsP single quantum well lasers exhibited a low threshold current density of 230 A/cm2 with a cavity length of 2 mm. A 1 mm long device launched 2 W CW output power with a wallplug efficiency of nearly 50%. The measured lasing characteristics compare favorably to those of 808 nm lasers grown by other growth techniques
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1 mm; 2 W; 2 mm; 50 percent; 808 nm; CW output power; GaInP-GaInAsP; SCH-QW lasers; cavity length; lasing characteristics; solid source molecular beam epitaxy; tensile strained GaInP-GaInAsP single quantum well lasers; threshold current density; wallplug efficiency; Aluminum; Diode lasers; Laser theory; Molecular beam epitaxial growth; Pump lasers; Quantum well lasers; Solid lasers; Surface emitting lasers; Temperature; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600024
