DocumentCode :
2993686
Title :
Silicon doping of InP grown by MOVPE using tertiarybutylphosphine
Author :
Giesen, Ch. ; Xu, X.G. ; Hövel, R. ; Heuken, M. ; Heime, K.
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
47
Lastpage :
50
Abstract :
Disilane has been used to grow Si-doped InP by low pressure metal organic vapour phase epitaxy (LP-MOVPE). As phosphorous precursor we used tertiarybutylphosphine (TBP) and phosphine (PH3) for comparison. Trimethylindium (TMIn) was the In source. The dependence of carrier concentration on substrate temperature, V/III ratio and reactor pressure was investigated. The Si concentration was proportional to the ratio of molar fraction of disilane to TMIn independent on the used group V precursors. The doping efficiency using TBP was much higher than using PH3. The Si incorporation increases slightly with increasing V/III ratio independent on the group-V source. Also the electron concentration increases with increasing reactor pressure. Apparent activation energies of 1.4 eV, 1.6 eV and 1.8 eV were observed at reactor pressures of 100, 40 and 20 hPa for growth temperatures between 823 K and 883 K. Si incorporation mechanisms, which may explain the experimental results, are discussed
Keywords :
Hall mobility; III-V semiconductors; doping profiles; electron density; indium compounds; semiconductor doping; semiconductor growth; silicon; vapour phase epitaxial growth; 1.4 to 1.8 eV; 20 to 100 hPa; 823 to 883 K; Hall mobility; InP:Si; MOVPE; PH3; Si concentration; Si incorporation mechanisms; apparent activation energies; carrier concentration; disilane; doping efficiency; electron concentration; growth temperatures; low pressure metal organic vapour phase epitaxy; phosphine; reactor pressure dependence; substrate temperature dependence; tertiarybutylphosphine; trimethylindium; Doping; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Optical microscopy; Scanning electron microscopy; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600025
Filename :
600025
Link To Document :
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