Title :
Suppression of interdiffusion of Fe and Zn in InP:Fe/InP:Zn structures
Author :
Karlsson, S. ; Lourdudoss, S.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
Fe in semi-insulating (SI) InP:Fe has a low thermal stability when it is grown adjacent to p-InP:Zn. This report investigates the possibility of using S-codoping of the SI material to suppress the interdiffusion of Fe and Zn. At a sulphur codoping concentration of 5×1017 cm-3 no interdiffusion occurred and the material had a resistivity of 107 Ωcm, as indicated by SIMS and I-V analysis of n/SI/n and n/SI/p structures. These results show that S codoping of SI-InP can be used to suppress the interdiffusion of Fe and Zn while still maintaining the SI properties of the material
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; electrical resistivity; indium compounds; iron; secondary ion mass spectra; semiconductor doping; semiconductor junctions; sulphur; thermal stability; zinc; 1E7 ohmcm; I-V analysis; InP:Fe,S-InP:Zn; InP:Fe/InP:Zn structures; S-codoping; SIMS profiles; annealing; interdiffusion suppression; n/semi-insulating/n structures; n/semi-insulating/p structures; resistivity; semi-insulating InP:Fe; thermal stability; Annealing; Conductivity; Indium phosphide; Insulation; Iron; Semiconductor materials; Substrates; Thermal stability; Wet etching; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600026
