Title :
Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond
Author :
Siping, Zhao ; Younan, Hua ; Eddie, Er ; Hong, Khoo Ley
Author_Institution :
Chartered Semicond. Mfg Ltd., Singapore
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.
Keywords :
failure analysis; focused ion beam technology; nanotechnology; scanning electron microscopy; specimen preparation; FIB slice techniques; Sela fine cleave techniques; failure analysis; high- resolution SEM profile; nanotechnology; sample preparation method; size 110 nm; wafer fabrication; Erbium; Fabrication; Failure analysis; Focusing; Information analysis; Inspection; Ion beams; Milling; Textile industry; Wood industry;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380784
