Title :
Simulation of High Efficiency Nc-Si /uc-Si Tandem Solar Cells
Author :
Fengxiang Chen ; Wenying Xu ; Lisheng Wang ; Yingyan Yi
Author_Institution :
Dept. of Phys. Sci. & Technol., Wuhan Univ. of Technol., Wuhan, China
Abstract :
In order to improve the conversion efficiency of thin film solar cells, tandem technology is used to absorb the solar spectrum. Since nano-crystalline silicon film has the characteristic of good photosensitivity, good absorption coefficient and stability under light soak, this thin film is expected to replace the amorphous silicon as the top solar cell in tandem solar cells. In this paper, the nc-Si/uc-Si tandem solar cell was optimized by simulation. The simulation results show that the band gap of the top cell has very important influence on the conversion efficiency of the tandem cell. When the band gap increases from 1.8eV to 2.1eV, the efficiency can be raised more than 3 percentage points. And the influences of the bottom cell, the tunneling junction are also discussed.
Keywords :
absorption coefficients; elemental semiconductors; energy gap; nanostructured materials; semiconductor thin films; silicon; solar cells; thin film devices; tunnelling; Si-Si; absorption coefficient; amorphous silicon; band gap; conversion efficiency; electron volt energy 1.8 eV to 2.1 eV; high efficiency tandem solar cells; light soak; nanocrystalline silicon film; photosensitivity; solar spectrum; thin film solar cells; tunneling junction; Amorphous silicon; Doping; Junctions; Photonic band gap; Photovoltaic cells; Tunneling;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6270493
