Title :
Ultrahigh-speed InGaP/AlGaAs/InGaAs HBTs using Mg as the base dopant
Author :
Kobayashi, S. ; Fujita, T. ; Yakihara, T. ; Oka, S. ; Miura, A.
Author_Institution :
R&D Dept., Teratec Corp., Tokyo, Japan
Abstract :
We have fabricated ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), which employ Mg as the base-region p-type dopant. In addition, the dead region under the base metal contact layer has been etched away. Even with a HBT base layer as thick as 60 nm, we obtained excellent frequency characteristics of the short-circuit current-gain frequency ft and the maximum frequency of oscillation fmax as high as approximately 140 GHz and 230 GHz, respectively. We obtained maximum toggle frequency of 22.5 GHz and direct oscillation frequency of 80 GHz for the static frequency divider and the base common transistor oscillator, respectively, by using the 4-inch full process of InGaP/AlGaAs/InGaAs graded-base HBT
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; magnesium; semiconductor doping; InGaP-AlGaAs-InGaAs:Mg; Mg base p-type dopant; base common transistor oscillator; direct oscillation frequency; maximum frequency of oscillation; short-circuit current-gain frequency; static frequency divider; toggle frequency; ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base HBT; Etching; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Oscillators; Parasitic capacitance; Prototypes; Solid state circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600028
