Title :
Overgrowth of InGaAsP materials on rectangular-patterned gratings using GSMBE
Author :
Koontz, E.M. ; Lim, M.H. ; Wong, V.V. ; Petrich, G.S. ; Kolodziejski, L.A. ; Smith, Henry I. ; Goorsky, M.S. ; Matney, K.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Periodic perturbations of the refractive index is a foundation for realizing InP-based single mode photonic devices for all-optical communication networks. In order to achieve a particular refractive index modulation, such as that required by distributed feedback lasers and Bragg grating resonators, the periodic structure must reside within the device, necessitating epitaxial overgrowth. Results of an investigation of a low temperature oxide removal technique combined with gas source molecular beam epitaxial overgrowth of X-ray lithographically patterned rectangular gratings will be presented
Keywords :
III-V semiconductors; chemical beam epitaxial growth; diffraction gratings; gallium arsenide; indium compounds; optical fabrication; refractive index; semiconductor epitaxial layers; semiconductor growth; Bragg grating resonator; GSMBE; InGaAsP; X-ray lithography; all-optical communication network; distributed feedback laser; gas source molecular beam epitaxial overgrowth; low temperature oxide removal; periodic structure; rectangular-patterned grating; refractive index modulation; single mode photonic device; Bragg gratings; Communication networks; Distributed feedback devices; Gas lasers; Laser feedback; Laser modes; Optical materials; Periodic structures; Refractive index; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600029
