MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

Author

Paraskevopoulos, A. ; Künzel, H. ; Böttcher, J. ; Urmann, G. ; Hensel, H.J. ; Bozbek, Al

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1997

fDate

11-15 May 1997

Firstpage

66

Lastpage

69

Abstract

High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes

Keywords

III-V semiconductors; diffraction gratings; indium compounds; molecular beam epitaxial growth; optical fabrication; semiconductor growth; DFB grating; InP; MBE regrowth; butt-coupling integration; corrugated quaternary surface; dry etching; mesa structure; optoelectronic device; patterned surface; planarization; solid source molecular beam epitaxy; wet etching; Cleaning; Cooling; Corrugated surfaces; Indium phosphide; Molecular beam epitaxial growth; Optical pumping; Optical surface waves; Optoelectronic devices; Solids; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600030

Filename

600030