DocumentCode
2993795
Title
A short channel MOSFET modelling for analogue circuit design with emphasis on carrier mobility
Author
Sevcenco, Andrei ; Brezeanu, Gheorghe ; Badila, Marian
fYear
2009
fDate
9-10 July 2009
Firstpage
1
Lastpage
4
Abstract
An analytical model to estimate the submicron MOS channel electrical characteristics is presented. The carrier mobility dependence on horizontal and vertical electrical fields in the transistor´s channel is considered. New expressions are obtained for the transfer and output characteristics. A very good agreement between the model and the measured data on nMOS and pMOS structures for analogue applications is proved.
Keywords
MOSFET; analogue circuits; carrier mobility; analogue circuit design; carrier mobility; horizontal electrical field; nMOS; pMOS; short channel MOSFET; submicron MOS channel; vertical electrical field; Analytical models; CMOS technology; Charge carrier processes; Circuit synthesis; Electron mobility; Equations; MOS devices; MOSFET circuits; Semiconductor device modeling; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Signals, Circuits and Systems, 2009. ISSCS 2009. International Symposium on
Conference_Location
Iasi
Print_ISBN
978-1-4244-3785-6
Electronic_ISBN
978-1-4244-3786-3
Type
conf
DOI
10.1109/ISSCS.2009.5206115
Filename
5206115
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