• DocumentCode
    2993944
  • Title

    Analysis of Poly Resistor Mismatch

  • Author

    Tan, Philip Beow Yew ; Kordesch, Albert Victor ; Sidek, Othman

  • Author_Institution
    Silterra Malaysia Sdn. Bhd., Kulim
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    1028
  • Lastpage
    1029
  • Abstract
    In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.
  • Keywords
    resistors; N+ poly resistor; P+ poly resistor; mismatch analysis; Boron; CMOS technology; Electrical resistance measurement; Etching; Grain size; Kelvin; Lithography; Resistors; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380795
  • Filename
    4266778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2993944