Title :
Modeling of Polyimide MIM Capacitors for Applications in Planar Monolithic Microwave Integrated Circuits
Author :
Sanusi, R. ; Rahim, Ahmad Ismat Abdul ; Osman, M.N. ; Kushairi, N. ; Rasmi, A. ; Muhammad, N.F.I. ; Yahya, M.R. ; Mat, A. F Awang
Author_Institution :
Technol. Incubation Centre One, Serdang
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Polymide metal-insulator-metal (MIM) overlay capacitors for use in monolithic microwave integrated circuits (MMICs) based on high electron mobility transistors (HEMTs) on gallium arsenide substrates are presented. Modeling of the capacitors was performed using a 2-dimensional electromagnetic CAD simulator to obtain Scattering (S-) parameters for different capacitor dimensions for operating frequencies from 0.05 to 8 GHz. The behaviour of the capacitor as a function of operating frequencies is studied by means of Smith chart. The capacitor is finally represented by a proposed equivalent circuit model to describe its overall behavior for planar MMIC simulations.
Keywords :
HEMT integrated circuits; MIM devices; MMIC; circuit CAD; equivalent circuits; gallium arsenide; integrated circuit modelling; polymer films; thin film capacitors; HEMT; Smith chart; equivalent circuit model; frequency 0.05 GHz to 8 GHz; gallium arsenide substrates; high electron mobility transistors; planar MMIC simulation; planar monolithic microwave integrated circuits; polyimide MIM capacitors; scattering parameters; two-dimensional electromagnetic CAD simulator; Application specific integrated circuits; Electromagnetic scattering; HEMTs; Integrated circuit modeling; MIM capacitors; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Polyimides;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380796
