AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

Author

Cheng, Shiou-Ying ; Lin, Po-Hung ; Wang, Wei-Chou ; Chen, Jing-Yuh ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1997

fDate

11-15 May 1997

Firstpage

77

Lastpage

78

Abstract

We have demonstrated a new GaInAs/AlInAs long-period-superlattice resonant-tunneling transistor (LPSRTT) with 20-period i-AlGaAs/n⁺-GaInAs superlattice. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped NDR phenomenon resulting from resonant tunneling through the superlattice is obtained in the studied LPSRTT device at 77 K

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; negative resistance devices; resonant tunnelling transistors; semiconductor growth; semiconductor superlattices; 300 K; 77 K; AlInAs-InGaAs; LPSRTT; MOCVD growth; long-period-superlattice resonant-tunneling transistor; negative differential resistance; Chemical vapor deposition; Indium gallium arsenide; Indium phosphide; MOCVD; Organic chemicals; P-n junctions; Resonant tunneling devices; Superlattices; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600033

Filename

600033